IEC 60747-8-2010 半导体器件.分立器件.第8部分:场效应晶体管
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【英文标准名称】:Semiconductordevices-Discretedevices-Part8:Field-effecttransistors
【原文标准名称】:半导体器件.分立器件.第8部分:场效应晶体管
【标准号】:IEC60747-8-2010
【标准状态】:现行
【国别】:国际
【发布日期】:2010-12
【实施或试行日期】:2010-12
【发布单位】:国际电工委员会(IX-IEC)
【起草单位】:IEC/SC47E
【标准类型】:()
【标准水平】:()
【中文主题词】:组件;定义(术语);分立器件;漏电流;电气工程;电子工程;电子设备及元件;场效应晶体管;大门;检验;极限(数学);测量;测量技术;金属氧化物半导体场效应晶体管;额定值;可靠度;肖特基电路;半导体器件;半导体;符号;晶体管
【英文主题词】:Components;Definitions;Discretedevices;Draincurrent;Electricalengineering;Electronicengineering;Electronicequipmentandcomponents;Field-effecttransistors;Gates;Inspection;Limits(mathematics);Measurement;Measuringtechniques;MOSFET;Ratings;Reliability;Schottkycircuit;Semiconductordevices;Semiconductors;Symbols;Transistors
【摘要】:ThispartofIEC60747givesstandardsforthefollowingcategoriesoffield-effecttransistors:–typeA:junction-gatetype;–typeB:insulated-gatedepletion(normallyon)type;–typeC:insulated-gateenhancement(normallyoff)type.Sinceafield-effecttransistormayhaveoneorseveralgates,theclassificationshownbelowresults:NOTE1Schottkybarrier-gateandinsulatedgatedevicesincludedepletiontypedevicesandenhancementtypedevices.NOTE2MOSFETsforsomeapplicationsmaynothaveinversediodecharacteristicsinthedatasheet.Specialcircuitelementstructurestoeliminatebodydiodeareunderdevelopmentforsuchapplications.MOSFETapplicationssuchasmotorcontrolequipmentneedtospecifytheinversediodecharacteristicsintheMOSFETtousetheinversediodeasafreewheelingdiode.NOTE3ThegraphicalsymbolonlyfortypeCisusedinthisstandard.ThestandardequallyappliesforP-channelandfortypeAandBdevices.
【中国标准分类号】:L44
【国际标准分类号】:31_080_30
【页数】:160P.;A4
【正文语种】:
【原文标准名称】:半导体器件.分立器件.第8部分:场效应晶体管
【标准号】:IEC60747-8-2010
【标准状态】:现行
【国别】:国际
【发布日期】:2010-12
【实施或试行日期】:2010-12
【发布单位】:国际电工委员会(IX-IEC)
【起草单位】:IEC/SC47E
【标准类型】:()
【标准水平】:()
【中文主题词】:组件;定义(术语);分立器件;漏电流;电气工程;电子工程;电子设备及元件;场效应晶体管;大门;检验;极限(数学);测量;测量技术;金属氧化物半导体场效应晶体管;额定值;可靠度;肖特基电路;半导体器件;半导体;符号;晶体管
【英文主题词】:Components;Definitions;Discretedevices;Draincurrent;Electricalengineering;Electronicengineering;Electronicequipmentandcomponents;Field-effecttransistors;Gates;Inspection;Limits(mathematics);Measurement;Measuringtechniques;MOSFET;Ratings;Reliability;Schottkycircuit;Semiconductordevices;Semiconductors;Symbols;Transistors
【摘要】:ThispartofIEC60747givesstandardsforthefollowingcategoriesoffield-effecttransistors:–typeA:junction-gatetype;–typeB:insulated-gatedepletion(normallyon)type;–typeC:insulated-gateenhancement(normallyoff)type.Sinceafield-effecttransistormayhaveoneorseveralgates,theclassificationshownbelowresults:NOTE1Schottkybarrier-gateandinsulatedgatedevicesincludedepletiontypedevicesandenhancementtypedevices.NOTE2MOSFETsforsomeapplicationsmaynothaveinversediodecharacteristicsinthedatasheet.Specialcircuitelementstructurestoeliminatebodydiodeareunderdevelopmentforsuchapplications.MOSFETapplicationssuchasmotorcontrolequipmentneedtospecifytheinversediodecharacteristicsintheMOSFETtousetheinversediodeasafreewheelingdiode.NOTE3ThegraphicalsymbolonlyfortypeCisusedinthisstandard.ThestandardequallyappliesforP-channelandfortypeAandBdevices.
【中国标准分类号】:L44
【国际标准分类号】:31_080_30
【页数】:160P.;A4
【正文语种】:
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